Single-ended sense amplifier robustness evaluation for OxRRAM technology

H. Aziza, M. Bocquet, M. Moreau, J. Portal
{"title":"Single-ended sense amplifier robustness evaluation for OxRRAM technology","authors":"H. Aziza, M. Bocquet, M. Moreau, J. Portal","doi":"10.1109/IDT.2013.6727097","DOIUrl":null,"url":null,"abstract":"In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.","PeriodicalId":446826,"journal":{"name":"2013 8th IEEE Design and Test Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 8th IEEE Design and Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2013.6727097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
OxRRAM技术单端感测放大器鲁棒性评价
本文在电路水平上定量分析了OxRRAM细胞可变性对电路性能的影响。针对记忆单元的可变性,对单端感测放大器结构进行了评估。这项研究能够在不影响可靠性的情况下提高OxRRAM产量并减少读取操作期间的电池消耗。由于oxrram中开关过程的随机性,导致了很大的可变性,所有的模拟都是蒙特卡罗导向的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Assertion based on-line fault detection applied on UHF RFID tag Evaluation of the angle of arrival based techniques Novel designs of digital detection analyzer for intelligent detection and analysis in digital microfluidic biochips Systolic architecture for hardware implementation of two-dimensional non-separable filter-bank Compilation optimization exploration for thermal dissipation reduction in embedded systems
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1