G. Belenky, C. Reynolds, R. Kazarinov, V. Swaminathan, S. Luryi, J. Lopata
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引用次数: 0
Abstract
Summary form only given. In this paper we show experimentally that utilization of a doped waveguide (or a separate confinement layer-SCH layer) leads to suppression of electron leakage current in multi-quantum-well devices. Our experiments reveal the influence of p-doping profile on the temperature sensitivity of threshold.
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