{"title":"A Novel True Random Number Generator Design Leveraging Emerging Memristor Technology","authors":"Yandan Wang, W. Wen, Hai Helen Li, Miao Hu","doi":"10.1145/2742060.2742088","DOIUrl":null,"url":null,"abstract":"Memristor, the fourth basic circuit element, demonstrates obvious stochastic behaviors in both the static resistance states and the dynamic switching. In this work, a novel memristor-based true random number generator (MTRNG) is presented which leverages the stochastic property when switching a device between its binary states. Compared to conventional random number generators that require amplifiers or comparators with high complexity, the use of memristors significantly reduces the design cost: a basic MTRNG consists of only one memristor, six transistors, and one D Flip-flop. To maximize the entropy of the random bit generation, we further enhanced the design to a 2-branch scheme which can provide a uniform bit distribution. Our simulation results show that the proposed MTRNGs offer high operating speed and low power consumption: the reading clocks of the basic 1-branch and the enhanced 2-branch schemes can reach at 1.05GHz and 0.96GHz with power assumptions of 31.1\"W and 80.3\"W, respectively. Moreover, the zero-versus-one distributions and sampling rates of MTRNGs can be flexibly reconfigured by modulating the width and amplitude of the programming pulse applied on a memristor and therefore adjusting its switching probability between ON and OFF states.","PeriodicalId":255133,"journal":{"name":"Proceedings of the 25th edition on Great Lakes Symposium on VLSI","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 25th edition on Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2742060.2742088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
Abstract
Memristor, the fourth basic circuit element, demonstrates obvious stochastic behaviors in both the static resistance states and the dynamic switching. In this work, a novel memristor-based true random number generator (MTRNG) is presented which leverages the stochastic property when switching a device between its binary states. Compared to conventional random number generators that require amplifiers or comparators with high complexity, the use of memristors significantly reduces the design cost: a basic MTRNG consists of only one memristor, six transistors, and one D Flip-flop. To maximize the entropy of the random bit generation, we further enhanced the design to a 2-branch scheme which can provide a uniform bit distribution. Our simulation results show that the proposed MTRNGs offer high operating speed and low power consumption: the reading clocks of the basic 1-branch and the enhanced 2-branch schemes can reach at 1.05GHz and 0.96GHz with power assumptions of 31.1"W and 80.3"W, respectively. Moreover, the zero-versus-one distributions and sampling rates of MTRNGs can be flexibly reconfigured by modulating the width and amplitude of the programming pulse applied on a memristor and therefore adjusting its switching probability between ON and OFF states.