A Novel True Random Number Generator Design Leveraging Emerging Memristor Technology

Yandan Wang, W. Wen, Hai Helen Li, Miao Hu
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引用次数: 41

Abstract

Memristor, the fourth basic circuit element, demonstrates obvious stochastic behaviors in both the static resistance states and the dynamic switching. In this work, a novel memristor-based true random number generator (MTRNG) is presented which leverages the stochastic property when switching a device between its binary states. Compared to conventional random number generators that require amplifiers or comparators with high complexity, the use of memristors significantly reduces the design cost: a basic MTRNG consists of only one memristor, six transistors, and one D Flip-flop. To maximize the entropy of the random bit generation, we further enhanced the design to a 2-branch scheme which can provide a uniform bit distribution. Our simulation results show that the proposed MTRNGs offer high operating speed and low power consumption: the reading clocks of the basic 1-branch and the enhanced 2-branch schemes can reach at 1.05GHz and 0.96GHz with power assumptions of 31.1"W and 80.3"W, respectively. Moreover, the zero-versus-one distributions and sampling rates of MTRNGs can be flexibly reconfigured by modulating the width and amplitude of the programming pulse applied on a memristor and therefore adjusting its switching probability between ON and OFF states.
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一种利用新兴忆阻器技术的真随机数发生器设计
忆阻器作为电路的第四个基本元件,在静态电阻状态和动态开关状态下都表现出明显的随机特性。在这项工作中,提出了一种新的基于记忆电阻的真随机数发生器(MTRNG),它利用了器件在二进制状态之间切换时的随机特性。传统的随机数发生器需要高复杂性的放大器或比较器,与之相比,使用忆阻器显著降低了设计成本:一个基本的MTRNG仅由一个忆阻器、六个晶体管和一个D触发器组成。为了最大限度地提高随机比特生成的熵,我们进一步将设计增强为可以提供均匀比特分布的2支路方案。仿真结果表明,所提出的mtrng具有高运行速度和低功耗的特点:在功率假设为31.1”W和80.3”W的情况下,基本1支路方案和增强2支路方案的读时钟分别可以达到1.05GHz和0.96GHz。此外,通过调制施加在忆阻器上的编程脉冲的宽度和幅度,可以灵活地重新配置mtrng的零对一分布和采样率,从而调整其在on和OFF状态之间的开关概率。
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