Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528642

Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani

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Abstract

Electro-magnetic Induced Transparency (EIT) has been studied as a mechanism of lasers without population inversion. Little attention has been given to EIT on phonon systems, while it has a potential of application to EIT and thus THz laser and modulator. Quantum interference of multiple longitudinal optical (LO) phonon modes and the continuum of inter-valence band transition is studied in this report. p-type Ga0.5In0.5P alloy system is studied by Raman spectroscopy. The detailed analysis by spectrum fitting reveals the superposition of characteristic asymmetric profile and the contribution of a trigonal phonon mode due to ordering effect of Ga0.5In0.5P. These results indicate that Ga0.5In0.5P is a possible material of EIT on phonon systems. It is expected that the change of the degree of ordering leads to the control of quantum interference for application of EIT.

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p型Ga0.5In0.5P中三种LO模式的量子干涉:一个三角声子模式的贡献

研究了电磁感应透明(EIT)作为激光无居群反转的机制。虽然在声子系统上的电致发光有很大的应用潜力，但在声子系统上的电致发光却很少受到关注。本文研究了多个纵向光学声子模的量子干涉和价间带跃迁的连续性。用拉曼光谱研究了p型Ga0.5In0.5P合金体系。通过谱拟合的详细分析，揭示了Ga0.5In0.5P的有序效应导致的特征不对称轮廓叠加和三角声子模式的贡献。这些结果表明，Ga0.5In0.5P是声子系统上EIT的可能材料。期望通过有序度的改变来控制量子干涉，从而实现EIT的应用。

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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