M. Reyboz, O. Rozeau, T. Poiroux, P. Martín, G. Lecarval, J. Jomaah
{"title":"Explicit Analytical Charge-Based Model of Asymmetrical Double Gate MOSFET","authors":"M. Reyboz, O. Rozeau, T. Poiroux, P. Martín, G. Lecarval, J. Jomaah","doi":"10.1109/EDSSC.2005.1635255","DOIUrl":null,"url":null,"abstract":"This paper provides an explicit analytical charge-based model of Asymmetrical Double Gate (ADG) MOSFET. Its is based on Poisson equation resolution and field continuity equations, and gives explicit analytical expressions of the inversion charge and the drain current considering a long undoped transistor. There are no charge-sheet approximation and no fitting parameter. Consequently, this is a fully analytical and predictive model allowing to describe planar DG MOSFET as well as FinFET. The validity of this model is demonstrated by comparisons with Atlas simulations.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635255","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper provides an explicit analytical charge-based model of Asymmetrical Double Gate (ADG) MOSFET. Its is based on Poisson equation resolution and field continuity equations, and gives explicit analytical expressions of the inversion charge and the drain current considering a long undoped transistor. There are no charge-sheet approximation and no fitting parameter. Consequently, this is a fully analytical and predictive model allowing to describe planar DG MOSFET as well as FinFET. The validity of this model is demonstrated by comparisons with Atlas simulations.
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