{"title":"TE/TM mode selective channel waveguides in GaAs/AlAs superlattice fabricated by SiO2 cap disordering","authors":"Yasuhiro Suzuki, H. Iwamura, O. Mikami","doi":"10.1063/1.103274","DOIUrl":null,"url":null,"abstract":"Novel structure TE/TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity‐free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low‐loss waveguides even at a wavelength close to the absorption edge of the as‐grown SL. By observing the near‐field patterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light.","PeriodicalId":213830,"journal":{"name":"Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E","volume":"17 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.103274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
Novel structure TE/TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity‐free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low‐loss waveguides even at a wavelength close to the absorption edge of the as‐grown SL. By observing the near‐field patterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
