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Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E最新文献

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TE/TM mode selective channel waveguides in GaAs/AlAs superlattice fabricated by SiO2 cap disordering 二氧化硅帽无序制备GaAs/AlAs超晶格中TE/TM模式选择性通道波导
Yasuhiro Suzuki, H. Iwamura, O. Mikami
Novel structure TE/TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity‐free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low‐loss waveguides even at a wavelength close to the absorption edge of the as‐grown SL. By observing the near‐field patterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light.
提出了一种新型的TE/TM模式选择光通道波导结构,并利用二氧化硅帽退火诱导的无杂质无序在GaAs/AlAs超晶格(SLs)中制备。研究发现,即使在接近生长的SL吸收边缘的波长处,无序的SL区域也可以作为低损耗波导使用。通过观察近场模式,证实了这些通道波导可以选择性地限制TE或TM偏振光。
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引用次数: 32
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Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E
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