Device characteristics of single-layer graphene FETs grown on copper

K. Tahy, Margaret Jane Fleming, Barbara Raynal, V. Protasenko, S. Koswatta, D. Jena, H. Xing, M. Kelly
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Abstract

The exceptional electrical properties of graphene materials have led to an explosion of research investigating the potential of graphene as the foundation for a future generation of devices as well as developing methods of producing high quality graphene materials. Material quality and our ability to manipulate the properties of graphene will ultimately determine the success of graphene as a device platform. Recently, the formation of single layer graphene via catalyzed-chemical vapor deposition (CVD) on copper foils has generated much interest [1]. A few groups have reported the CVD growth of graphene on copper, and transport properties including quantum Hall effect [2,3] in layers subsequently transferred to insulating substrates. However, there have been no careful studies of FETs fabricated from them. In this work, we report the characteristics of single-layer graphene FETs whose channels were grown by CVD on copper.
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在铜上生长的单层石墨烯fet的器件特性
石墨烯材料卓越的电学性能导致了研究的爆炸式增长,研究石墨烯作为下一代设备的基础的潜力,以及开发生产高质量石墨烯材料的方法。材料质量和我们控制石墨烯特性的能力将最终决定石墨烯作为器件平台的成功。最近,通过催化化学气相沉积(CVD)在铜箔上形成单层石墨烯引起了人们的广泛关注[1]。一些研究小组已经报道了石墨烯在铜上的CVD生长,以及传输特性,包括量子霍尔效应[2,3],这些特性随后转移到绝缘衬底上。然而,目前还没有对由它们制造的场效应管进行仔细的研究。在这项工作中,我们报告了单层石墨烯场效应管的特性,其通道是在铜上用CVD生长的。
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