M. Schefer, U. Lott, B. Klepser, H. Meier, W. Patrick, W. Bachtold
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引用次数: 3
Abstract
The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl mu/m InP based HEMT with f/sub max/=200 GHz and f/sub t/=100 GHz. A basic V-band oscillator, a high power and a varactor tuned oscillator are compared. The resonance frequency of the basic oscillator is 54.333 GHz and the phase noise -70 dBc/Hz @ 1 MHz offset. The high power oscillator shows 83 dBm output power at 48 GHz For the varactor tunable oscillator an output power of 0 dBm at 63 GHz and a tuning range of 100 MHz are measured. The circuits were fabricated in coplanar technology.
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