{"title":"Analysis of inversion layer electron density of InGaAs MOSFETs","authors":"Taiki Fujimoto, A. Hiroki, T. Katano","doi":"10.1109/IMFEDK.2016.7521683","DOIUrl":null,"url":null,"abstract":"This paper investigates the electron density distributions in the inversion layer of Ta gate, Al2O3 insulator and InGaAs substrate MOSFETs. Schrödinger/ Poisson model is used to analyze the quantum effects of the inversion layer. The electron density distributions of InGaAs MOSFETs are compared with those of Si MOSFETs. It is found that the low electron effective mass of InGaAs substrate leads to higher energy of the subbands and the broadening of the electron density in the inversion layer.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper investigates the electron density distributions in the inversion layer of Ta gate, Al2O3 insulator and InGaAs substrate MOSFETs. Schrödinger/ Poisson model is used to analyze the quantum effects of the inversion layer. The electron density distributions of InGaAs MOSFETs are compared with those of Si MOSFETs. It is found that the low electron effective mass of InGaAs substrate leads to higher energy of the subbands and the broadening of the electron density in the inversion layer.
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