Anomalous Stress Shift of Impurity Lines in Te under High Pressure

Abstract

For the elementary semiconductor Tellurium the effects of hydrostatic and uniaxial stress are in many aspects complementary. Whereas for hydrostatic pressure the helical chains of the lattice cell are pressed together and slightly expanded along the symmetry axis, for uniaxial stress along this axis holds exactly the opposite. This behaviour is well reflected by the complementary distortion of the electronic energy band states and has been confirmed experimentally by cyclotron resonance experiments [1]. The present study investigates whether the same complementary situation holds also for the shallow impurity system and provides eventually a tool for the still remaining identification of the different impurity transitions.