Discrete current limiting circuit for emerging memory programming

Abstract

This work presents a novel, discrete-component circuit for the electrical characterisation of Resistive Random Access Memory (RRAM). The forming of State-Of-The-Art RRAM cell in one resistor (1R) configuration is demonstrated, enabling the possibility of sparing the commonly integrated series transistor. The presented DCL circuit is furthermore benchmarked versus other discrete and integrated typologies, showing dramatic improvement over existing discrete solutions, and comparable performances with integrated architectures. Finally, multi-bit storage is experimentally demonstrated through modulation of the programming current amplitude.