Scaling analysis of capacitive MEMS microphones considering residual stress

Kui Song, Weiguan Zhang, Wei Xu, Yi-Kuen Lee
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引用次数: 3

Abstract

We conduct a systematic scaling analysis of the sensitivity of a silicon capacitive MEMS microphone based on a dimensionless 1-degree-of-freedom (1DOF) model considering residual stress. The theoretical normalized sensitivity we derived is a nonlinear function of normalized diaphragm size (h/a), acoustic driving frequency, 3 effective stiffness terms and the other parameters. From our 1DOF model, the optimal normalized diaphragm has to be trade-off between high sensitivity and large bandwidth. In addition, we found that a critical diaphragm radius of 415 μm for a silicon MEMS microphone, is located at the inflection point in the sensitivity function of the radius. In addition, this critical radius corresponds to the minimum effective stiffness of the microphone.
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考虑残余应力的电容式MEMS传声器标度分析
基于考虑残余应力的无量纲1自由度(1DOF)模型,对硅电容式MEMS传声器的灵敏度进行了系统的标度分析。理论归一化灵敏度是归一化膜片尺寸(h/a)、声驱动频率、3个有效刚度项和其他参数的非线性函数。从我们的1DOF模型来看,最佳的归一化光圈必须在高灵敏度和大带宽之间进行权衡。此外,我们发现对于硅MEMS麦克风而言,临界膜片半径为415 μm,位于该半径灵敏度函数的拐点处。此外,该临界半径对应于传声器的最小有效刚度。
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