Anthony Burke, David J. Waddington, D. Carrad, R. Lyttleton, Hoe Hark Tan, Peter J. Reece, O. Klochan, A. Hamilton, A. Rai, D. Reuter, A. Wieck, A. Micolich
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引用次数: 12
Abstract
Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.
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