{"title":"A High Accuracy Low Power Convolution Operator with 12T SRAM for CNN","authors":"Tae Seob Oh, Younggun Pu, Kangyoon Lee","doi":"10.1109/ICUFN49451.2021.9528655","DOIUrl":null,"url":null,"abstract":"To get high accuracy, various weight should be stored in memory. For this, this paper presents tri-state weight static random access memory(SRAM). 12T SRAM is a form of power gating on the conventional 10T SRAM. By using power gating, the inverter can be turned off. The new weight (0) can be stored in 12T SRAM when inverter is turned off. The operator fabricated in a 0.18-µm CMOS process dissipates 172.3µW with the supply of 1.8V while convolution. Even without sizing, the writing margin is better than the conventional SRAM and the accuracy is improved by 23.2%.","PeriodicalId":318542,"journal":{"name":"2021 Twelfth International Conference on Ubiquitous and Future Networks (ICUFN)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Twelfth International Conference on Ubiquitous and Future Networks (ICUFN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICUFN49451.2021.9528655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
To get high accuracy, various weight should be stored in memory. For this, this paper presents tri-state weight static random access memory(SRAM). 12T SRAM is a form of power gating on the conventional 10T SRAM. By using power gating, the inverter can be turned off. The new weight (0) can be stored in 12T SRAM when inverter is turned off. The operator fabricated in a 0.18-µm CMOS process dissipates 172.3µW with the supply of 1.8V while convolution. Even without sizing, the writing margin is better than the conventional SRAM and the accuracy is improved by 23.2%.