Subthreshold characteristics of p-type triple-gate MOSFETs

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256826

M. Lemme, T. Mollenhauer, W. Henschel, T. Wahlbrink, H. Gottlob, J. Efavi, M. Baus, O. Winkler, B. Spangenberg, H. Kurz

引用次数: 13

Abstract

The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, the output and transfer characteristics of 70 nm printed gate length pMOSFETs with 22 nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.

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p型三栅极mosfet的亚阈值特性

介绍了在多通道SOI材料上制备三栅p型金属氧化物半导体场效应晶体管(p- mosfet)的方法和性能。为了证明三栅极结构对标度的有利影响，给出了印制栅极长度为70 nm、MESA宽度为22 nm的pmosfet的输出和转移特性。在短通道和长通道器件中研究了三栅极MESA宽度对亚阈值行为的几何影响。讨论了亚阈值特性的温度依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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