Circuits and technologies for highly integrated optical networking ICs at 10 Gb/s to 40 Gb/s

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) Pub Date : 2001-05-06 DOI:10.1109/CICC.2001.929795

S. Voinigescu, P. Popescu, P. Banens, M. Copeland, G. Fortier, K. Howlett, M. Herod, D. Marchesan, Jonathan L. Showell, S. Sziiagyi, H. Tran, J. Weng

引用次数: 28

Abstract

This paper presents a comparative overview of the performance of Si CMOS, SiGe BiCMOS and III-V HBT and FET technologies for 10-40 Gb/s fiber-optic applications. Active and passive device performance requirements, as well as on-chip isolation issues are first addressed. Fundamental building blocks are overviewed and the pros and cons of each technology implementation are discussed. Finally, a sub 2.5 W, highly integrated 10 Gb/s SiGe BiCMOS implementation of a 10 Gb/s to 622 Mb/s transceiver is described in detail. The transceiver achieves the highest level of integration, providing EOI (electro-optical-interface) and SerDes (Serializer-Deserializer) functions.

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10gb /s ~ 40gb /s高集成光网络ic电路与技术

本文比较了Si CMOS、SiGe BiCMOS、III-V HBT和FET技术在10- 40gb /s光纤应用中的性能。首先解决了有源和无源器件性能要求以及片上隔离问题。概述了基本构建块，并讨论了每种技术实现的优缺点。最后，详细描述了一个低于2.5 W、高集成度的10gb /s SiGe BiCMOS实现，该实现采用10gb /s至622 Mb/s的收发器。收发器实现了最高水平的集成，提供EOI(光电接口)和SerDes(序列化-反序列化)功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)

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