P. Diop, Papa Touty Traore, Papa Monzon Alassane Samake, Babou Dione, Fatimata Ba, Modou Pilor
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Abstract
A study of the effect of magnetic field temperature on a parallel vertical junction silicon solar cell in open circuit transient is presented in this work. The transitory density of excess minority carriers appears as the sum of infinite terms. The decay time between the density of minority carriers and the different harmonic states is studied. Optimizing the thickness of the base allows us to determine optimal temperatures that will constantly increase the transient decay time.
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