L. Stuchlíková, L. Harmatha, D. Buc, U. Helmersson, Q. Wahab
{"title":"Investigation of 4H-SiC diode with RuO/sub 2/ Schottky contact by DLTS","authors":"L. Stuchlíková, L. Harmatha, D. Buc, U. Helmersson, Q. Wahab","doi":"10.1109/ASDAM.2002.1088497","DOIUrl":null,"url":null,"abstract":"Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO/sub 2/ Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO/sub 2/ Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.
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