Advance simulation and optimization of high power lnGaN/GaN laser diodes

Abstract

The optimization of InGaN/GaN multiquantum wells structure based on Si-doped GaN substrate for λ∼445 nm is performed. Advance simulation for a self-consistent laser model combined with band-structure and free-carrier gain calculations is employed to study effects such as waveguiding, carrier transport and heat flux. Enhancement in output power of the optimized structure is calculated. It has been found that electron leakage into the p-doped ridge is the major limiting factor for high output power. The non-uniformity of the carrier distribution among quantum wells is believed to be responsible for undesired absorption. Noticeable improvement in the threshold currents and corresponding substantial enhancement in the optical output power have been achieved.