A. Muller, S. Simion, M. Dragoman, S. Iordanescu, I. Petrini, C. Anton, D. Vasilache, V. Avramescu, A. Coraci, F. Craciunoiu
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引用次数: 3
Abstract
The paper presents the manufacturing and the measurements of a few type of the passive components dedicated to GaAs based MMICs. Mesa type resistors (with values in the range of 50...1000 /spl Omega/) were manufactured on a 0.15 /spl mu/m thick n/sup -/ layer (10/sup 17/) cm/sup -3/ grown on SI GaAs. Also, rectangular spiral inductors, loop inductors and interdigitated capacitor structures were realized using AuGe deposition on GaAs SI substrate and lift-off metallization technique. The computed values for the microwave parameters of the manufactured components are in good agreement with the experimental ones.
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