{"title":"A low quiescent current 3.3V operation linear MMIC power amplifier for 5 GHz WLAN applications","authors":"J.H. Kim, Y. Noh, C. Park","doi":"10.1109/MWSYM.2003.1212507","DOIUrl":null,"url":null,"abstract":"We report a 5 GHz linear InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) power amplifier for wireless LAN applications. The three-stage power amplifier operates with 103 mA - low quiescent current of Class AB mode using active bias circuit under a single supply of +3.3V A total current of 196(194) mA is consumed with an output power of 18 dBm and PAE (power-added efficiency) of 9.7% at 5.25(5.15) GHz. The power amplifier exhibits a power gain of 19.6 (17.8/18.5) dB, 1-dB compression point (P/sub 1/dB) of 26(25/25) dBm, and PAE of 27.8(25.4/20) % at 5.25(5.15/5.85) GHz. Measured third-order IMD(intermodulation distortion) is less than -25 dBc at 3 dB back-off and less than -30 dBc at 5 dB back-off from P/sub 1/dB for the frequency range between 5.15 and 5.85 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1212507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
We report a 5 GHz linear InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) power amplifier for wireless LAN applications. The three-stage power amplifier operates with 103 mA - low quiescent current of Class AB mode using active bias circuit under a single supply of +3.3V A total current of 196(194) mA is consumed with an output power of 18 dBm and PAE (power-added efficiency) of 9.7% at 5.25(5.15) GHz. The power amplifier exhibits a power gain of 19.6 (17.8/18.5) dB, 1-dB compression point (P/sub 1/dB) of 26(25/25) dBm, and PAE of 27.8(25.4/20) % at 5.25(5.15/5.85) GHz. Measured third-order IMD(intermodulation distortion) is less than -25 dBc at 3 dB back-off and less than -30 dBc at 5 dB back-off from P/sub 1/dB for the frequency range between 5.15 and 5.85 GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
