A fast and accurate characterization method for full-CMOS circuits

R. Llopis, H. Kerkhoff
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Abstract

A fast and accurate method to determine delay, ramp (output rise/fall-time), power dissipation, and upper and lower noise margin values of full-CMOS circuits is presented. It is more than two orders of magnitude faster in comparison to conventional circuit simulations with an average error of 10% per logic cell. It can also deal with multiple time-overlapping inputs, a shortcoming of many current methods.<>
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一种快速准确的全cmos电路表征方法
提出了一种快速准确的方法来确定全cmos电路的延迟、斜坡(输出上升/下降时间)、功耗和上下噪声裕度值。与传统电路模拟相比,它的速度快了两个数量级,每个逻辑单元的平均误差为10%。它还可以处理多个时间重叠的输入,这是当前许多方法的缺点。
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