J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre
{"title":"Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors","authors":"J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre","doi":"10.1109/radecs47380.2019.9745644","DOIUrl":null,"url":null,"abstract":"The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.
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