Spatial fault simulation and the saturation effect

C. Stapper
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引用次数: 0

Abstract

Stochastic fault simulation processes have been used successfully to generate fault distributions for evaluating fault tolerant VLSI designs. In one of these processes, faults in subareas of integrated circuits are simulated as a function of time. This leads to an exponential increase of the average number of faults in the area segments of the integrated circuits. It was discovered analytically that by forcing a correlation between the number of faults in adjacent area segments, the increase in the number of faults with time exceeds exponential growth and exhibits a singularity. At the singularity point the fault population becomes infinite. The time associated with this singularity has been denoted as 'saturation time'.<>
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空间断层模拟与饱和效应
随机故障模拟过程已成功地用于生成故障分布,以评估VLSI设计的容错性。在其中一个过程中,集成电路子区域的故障被模拟为时间的函数。这导致集成电路区域段的平均故障数量呈指数增长。通过分析发现,通过强迫相邻区域段断层数之间的相关性,断层数随时间的增长超过指数增长,并表现出奇点。在奇点处,故障数变为无穷大。与这个奇点有关的时间被记为“饱和时间”。
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