Analysis on carrier trapping mechanism in organic diodes by charge modulation spectroscopy and electric field optical second harmonic generation measurement

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-12-29 DOI:10.1109/ASDAM.2014.6998636

E. Lim, M. Bok, D. Taguchi, M. Iwamoto

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Abstract

We studied electric field distribution changes induced in the active layer of ITO/PI/TIPS-pentacene/Au diodes by carrier injection. Upon application of a step voltage to the diodes, the electric field change across the TIPS-pentacene layer was measured. Significant electric field distribution change was suggested due to the carrier injection, and a simple model that accounts for the I-V characteristics of the diodes was proposed, on the basis of the Maxwell-Wagner model. By using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements, we studied the carrier trapping mechanism in ITO/PI/TIPS-pentacene/Au diodes. Using TR-EFISHG in combination with CMS is a very effective way to study carrier behaviors in diodes, and stress-biasing effect induced in TIPS-pentacene active layer can be well identified, in terms of carrier injection and interfacial carrier accumulation.

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利用电荷调制光谱和电场光二次谐波测量分析有机二极管的载流子捕获机理

研究了载流子注入对ITO/PI/ tips -并五烯/Au二极管活性层电场分布的影响。在对二极管施加阶跃电压后，测量了tips -五苯层上的电场变化。由于载流子注入，电场分布发生了明显的变化，并在Maxwell-Wagner模型的基础上，提出了一个解释二极管I-V特性的简单模型。通过电荷调制光谱(CMS)和时间分辨电场诱导光二次谐波(TR-EFISHG)测量，研究了ITO/PI/ tip -并五烯/Au二极管的载流子捕获机制。trf - efishg结合CMS是研究二极管中载流子行为的一种非常有效的方法，从载流子注入和界面载流子积累两方面可以很好地识别tips -并五苯活性层中诱导的应力偏置效应。

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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