{"title":"A bipolar smart power technology for high voltage applications","authors":"V. Denner, P. Flohrs, H. Michel","doi":"10.1109/APE.1989.97150","DOIUrl":null,"url":null,"abstract":"A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to U/sub CBO/=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Automotive Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APE.1989.97150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to U/sub CBO/=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown.<>
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