Some of the unique requirements of automotive power electronics applications are reviewed, and the technology approaches that can be applied to the requirements are shown. Tradeoffs in terms of technology selection, MOS versus bipolar, and structure are discussed. IC design examples are presented to illustrate the tradeoff selections for applications like high side drivers, ignition, and low side drivers. The automotive environment, loads, and some possible configurations are also discussed.<>
{"title":"Smart power integration for automotive applications","authors":"S. Falater, T. Hopkins","doi":"10.1109/APE.1989.97167","DOIUrl":"https://doi.org/10.1109/APE.1989.97167","url":null,"abstract":"Some of the unique requirements of automotive power electronics applications are reviewed, and the technology approaches that can be applied to the requirements are shown. Tradeoffs in terms of technology selection, MOS versus bipolar, and structure are discussed. IC design examples are presented to illustrate the tradeoff selections for applications like high side drivers, ignition, and low side drivers. The automotive environment, loads, and some possible configurations are also discussed.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125810796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The pulse width modulation (PWM) circuit approaches used in such applications as switching mode voltage regulators, positional motor control, fuel injector drivers, ignition drivers, and ABS control are discussed, as are the process-performance tradeoffs. The power efficiency improvements and switching considerations which lead to reduced-temperature IC operation when PWM is used are demonstrated. Its application to resistive and inductive load and also to regulators in automotive applications is shown. Future trends for the use of PWM output techniques in cars are discussed, and methods to further improve the cost effectiveness of PWM devices by transferring some of the features found in the intelligent switch to the outstation controller are examined.<>
{"title":"PWM controllers for automotive applications","authors":"K. Buss, A. Marshall","doi":"10.1109/APE.1989.97166","DOIUrl":"https://doi.org/10.1109/APE.1989.97166","url":null,"abstract":"The pulse width modulation (PWM) circuit approaches used in such applications as switching mode voltage regulators, positional motor control, fuel injector drivers, ignition drivers, and ABS control are discussed, as are the process-performance tradeoffs. The power efficiency improvements and switching considerations which lead to reduced-temperature IC operation when PWM is used are demonstrated. Its application to resistive and inductive load and also to regulators in automotive applications is shown. Future trends for the use of PWM output techniques in cars are discussed, and methods to further improve the cost effectiveness of PWM devices by transferring some of the features found in the intelligent switch to the outstation controller are examined.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131376712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Device structures and characteristics for three Smartdiscretes which have automotive applications are presented. Smartdiscretes are discrete power devices which incorporate a few small signal devices on a chip without added process complexity. The first is a power MOSFET with very low on-resistance and an integral temperature sensor. The second is an ignition coil driver with a temperature-compensated clamp. The third is a device with a built-in current limit, electrostatic discharge (ESD) protection, and a temperature-compensated clamp that is suitable for driving small inductive loads such as injector drivers.<>
{"title":"Smartdiscretes, new products for automotive applications","authors":"S. P. Robb, J. Sutor, L. Terry","doi":"10.1109/APE.1989.97168","DOIUrl":"https://doi.org/10.1109/APE.1989.97168","url":null,"abstract":"Device structures and characteristics for three Smartdiscretes which have automotive applications are presented. Smartdiscretes are discrete power devices which incorporate a few small signal devices on a chip without added process complexity. The first is a power MOSFET with very low on-resistance and an integral temperature sensor. The second is an ignition coil driver with a temperature-compensated clamp. The third is a device with a built-in current limit, electrostatic discharge (ESD) protection, and a temperature-compensated clamp that is suitable for driving small inductive loads such as injector drivers.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117178962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors reports on a panel session which was organized to discuss developments in power semiconductor technology suitable for automotive applications. The panel was chaired by the author, and the panel members were Kailash Jain, King Owyang, Miro Glogolja, Larry Latham, and Bill Dunn. The topics covered were device breakdown voltage specification, the best devices for low and high voltages, discrete vs. monolithic chip partitioning, the possibility of a generic chip, and the possible evolution of application-specific ICs (ASIC). A summary of the general conclusions made by the panel are provided.<>
作者报告了一个小组会议，该会议是为了讨论适合汽车应用的功率半导体技术的发展而组织的。该小组由作者担任主席，小组成员是Kailash Jain, King Owyang, Miro Glogolja, Larry Latham和Bill Dunn。讨论的主题包括器件击穿电压规范、低电压和高电压的最佳器件、分立与单片芯片划分、通用芯片的可能性以及专用集成电路(ASIC)的可能发展。以下是专家组所作结论的摘要。
{"title":"Future directions in semiconductor technology for automotive power electronics","authors":"B. J. Baliga","doi":"10.1109/APE.1989.97152","DOIUrl":"https://doi.org/10.1109/APE.1989.97152","url":null,"abstract":"The authors reports on a panel session which was organized to discuss developments in power semiconductor technology suitable for automotive applications. The panel was chaired by the author, and the panel members were Kailash Jain, King Owyang, Miro Glogolja, Larry Latham, and Bill Dunn. The topics covered were device breakdown voltage specification, the best devices for low and high voltages, discrete vs. monolithic chip partitioning, the possibility of a generic chip, and the possible evolution of application-specific ICs (ASIC). A summary of the general conclusions made by the panel are provided.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124630095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The authors discuss: (1) the increased use of power semiconductors (specifically power MOSFETs) in automotive applications; (2) environmental factors that have an impact on device cost; (3) changes that should be made to vehicles to reduce component and system cost; and (4) recent power semiconductor developments that increase the chances of survival in the harsh automotive environment. Basic power FET design, and system voltage variations and their impact on power FETs are also discussed.<>
{"title":"The impact of the automotive environment on power semiconductors","authors":"R. Frank, R. Valentine","doi":"10.1109/APE.1989.97161","DOIUrl":"https://doi.org/10.1109/APE.1989.97161","url":null,"abstract":"The authors discuss: (1) the increased use of power semiconductors (specifically power MOSFETs) in automotive applications; (2) environmental factors that have an impact on device cost; (3) changes that should be made to vehicles to reduce component and system cost; and (4) recent power semiconductor developments that increase the chances of survival in the harsh automotive environment. Basic power FET design, and system voltage variations and their impact on power FETs are also discussed.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114772856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-temperature electronics for automotive applications are discussed. It is reported that, by extending existing technology, automotive electronics can be operated at temperatures between 150 degrees C and 200 degrees C. Automotive load dump and its effect on reliability and future automotive electronics development are also discussed. It is stated that the improved efficiency that can be achieved by operating at higher voltage can easily be offset by the increased component costs if the load dump transient is increased by two or four times its present value.<>
{"title":"Summary of additional topics from the session on packaging and reliability","authors":"R.W. Johnson, R. Frank","doi":"10.1109/APE.1989.97164","DOIUrl":"https://doi.org/10.1109/APE.1989.97164","url":null,"abstract":"High-temperature electronics for automotive applications are discussed. It is reported that, by extending existing technology, automotive electronics can be operated at temperatures between 150 degrees C and 200 degrees C. Automotive load dump and its effect on reliability and future automotive electronics development are also discussed. It is stated that the improved efficiency that can be achieved by operating at higher voltage can easily be offset by the increased component costs if the load dump transient is increased by two or four times its present value.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124808576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cost-effective thermal design in power switching applications must consider the effect of thermal impedance of the packaging. A test method is presented for determining the transient thermal impedance of a package. Empirical measurements of the thermal impedance of some standard plastic packages, showing the effective thermal impedance under pulsed conditions, are also given. As an example of a practical application of the data presented, an application for switching motor control is considered.<>
{"title":"Transient thermal impedance considerations in power semiconductor applications","authors":"T. Hopkins, R. Tiziani","doi":"10.1109/APE.1989.97162","DOIUrl":"https://doi.org/10.1109/APE.1989.97162","url":null,"abstract":"Cost-effective thermal design in power switching applications must consider the effect of thermal impedance of the packaging. A test method is presented for determining the transient thermal impedance of a package. Empirical measurements of the thermal impedance of some standard plastic packages, showing the effective thermal impedance under pulsed conditions, are also given. As an example of a practical application of the data presented, an application for switching motor control is considered.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128212969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Some specialized power control strategies and electronic drive circuits available to enhance solenoid performance, together with a discussion on the relative merits of each, are presented. The operating principles of the solenoid are examined, and some insight is given as to the areas where it is possible to benefit from power control techniques. Digital solutions to the equations governing solenoid operation are presented, allowing quick evaluation of the various control techniques. A dual-level control scheme is shown to greatly improve the performance characteristics of the solenoid, as a force producer. The improvements may be concentrated in one or more areas (speed, stroke, force, or actuator size) depending on the application.<>
{"title":"High speed solenoid control techniques","authors":"G.C. Fulks","doi":"10.1109/APE.1989.97155","DOIUrl":"https://doi.org/10.1109/APE.1989.97155","url":null,"abstract":"Some specialized power control strategies and electronic drive circuits available to enhance solenoid performance, together with a discussion on the relative merits of each, are presented. The operating principles of the solenoid are examined, and some insight is given as to the areas where it is possible to benefit from power control techniques. Digital solutions to the equations governing solenoid operation are presented, allowing quick evaluation of the various control techniques. A dual-level control scheme is shown to greatly improve the performance characteristics of the solenoid, as a force producer. The improvements may be concentrated in one or more areas (speed, stroke, force, or actuator size) depending on the application.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128084956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The dynamic behavior and the operating range of a single-switch dual-output DC-DC converter is presented. The circuit is developed for automotive applications requiring regulated 12 V and 5 V supplies from a 24 V battery. The converter provides two independently regulated DC outputs from a single DC voltage source using one power semiconductor switch. Two discrete closed-loop feedback paths regulate the output voltages. One output voltage, supplied from a low-pass filter, is regulated by adjusting the duty cycle, while the other output, supplied from a higher-frequency bandpass filter, is controlled by the switching frequency. The converter is implemented using a 16-b Intel 8096 microcontroller communicating to external switching elements and control logic.<>
{"title":"Single switch dual output converter dynamic behavior and operating range","authors":"T. Charanasomboon, M. Devaney, R. Hoft","doi":"10.1109/APE.1989.97157","DOIUrl":"https://doi.org/10.1109/APE.1989.97157","url":null,"abstract":"The dynamic behavior and the operating range of a single-switch dual-output DC-DC converter is presented. The circuit is developed for automotive applications requiring regulated 12 V and 5 V supplies from a 24 V battery. The converter provides two independently regulated DC outputs from a single DC voltage source using one power semiconductor switch. Two discrete closed-loop feedback paths regulate the output voltages. One output voltage, supplied from a low-pass filter, is regulated by adjusting the duty cycle, while the other output, supplied from a higher-frequency bandpass filter, is controlled by the switching frequency. The converter is implemented using a 16-b Intel 8096 microcontroller communicating to external switching elements and control logic.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130557570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Jain, B. A. MacIver, S. Valeri, J. C. Erskine, C. Bulucea
A normally-on MOSFET structure called j-MOS for automotive electronic systems applications is discussed. These devices are built on silicon-on-insulator (SOI) and in bulk silicon and can be integrated as a smart power circuit element. The lowest on-resistance j-MOS device is built in an ideal trench configuration in bulk silicon and can be operated in either a three-terminal or a four-terminal mode. When operated in accumulation, a specific on-resistance of 0.8 m Omega cm/sup 2/ is reported. This low on-resistance is attributed to the combination of bulk conduction and surface accumulation, as well as to the details of the electron current flow in the channel. A factor of two superiority is reported in on-resistance over a trench DMOS structure for a given drain blocking voltage and feature size. In the four-terminal mode, a high transconductance, 290 S/cm/sup 2/, is achieved by controlling the voltage on the small junction in the gate. In the three-terminal mode, mixed pentode-triode drain characteristics are exhibited. Response times are comparable to those of a junction FET. This simple self-aligned structure could be useful in power switching and control applications.<>
讨论了一种用于汽车电子系统的常通MOSFET结构，称为j-MOS。这些器件建立在绝缘体上硅(SOI)和块状硅上，可以集成为智能电源电路元件。最低导通电阻的j-MOS器件是建立在一个理想的沟槽结构，在大量的硅，可以在三端或四端模式下工作。当在积累操作时，有0.8 m ω cm/sup 2/的特定导通电阻。这种低导通电阻归因于体传导和表面积累的结合，以及通道中电子电流流动的细节。在给定漏极阻断电压和特征尺寸的情况下，导通电阻优于沟槽DMOS结构。在四端模式下，通过控制栅极小结上的电压，可以实现290 S/cm/sup /的高跨导。在三端模式下，表现出混合五极-三极管漏极特性。响应时间可与结场效应管相媲美。这种简单的自对准结构可用于功率开关和控制应用。
{"title":"Trench j-MOS power field-effect transistors","authors":"K. Jain, B. A. MacIver, S. Valeri, J. C. Erskine, C. Bulucea","doi":"10.1109/APE.1989.97147","DOIUrl":"https://doi.org/10.1109/APE.1989.97147","url":null,"abstract":"A normally-on MOSFET structure called j-MOS for automotive electronic systems applications is discussed. These devices are built on silicon-on-insulator (SOI) and in bulk silicon and can be integrated as a smart power circuit element. The lowest on-resistance j-MOS device is built in an ideal trench configuration in bulk silicon and can be operated in either a three-terminal or a four-terminal mode. When operated in accumulation, a specific on-resistance of 0.8 m Omega cm/sup 2/ is reported. This low on-resistance is attributed to the combination of bulk conduction and surface accumulation, as well as to the details of the electron current flow in the channel. A factor of two superiority is reported in on-resistance over a trench DMOS structure for a given drain blocking voltage and feature size. In the four-terminal mode, a high transconductance, 290 S/cm/sup 2/, is achieved by controlling the voltage on the small junction in the gate. In the three-terminal mode, mixed pentode-triode drain characteristics are exhibited. Response times are comparable to those of a junction FET. This simple self-aligned structure could be useful in power switching and control applications.<<ETX>>","PeriodicalId":334933,"journal":{"name":"Automotive Power Electronics","volume":"73 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129167147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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