E. Budeanu, I. Grozescu, M. Purica, E. Rusu, S. V. Slobodchikov
{"title":"Coordinate sensitive photodetectors based on InGaAs/InP heterostructures","authors":"E. Budeanu, I. Grozescu, M. Purica, E. Rusu, S. V. Slobodchikov","doi":"10.1109/ASDAM.2000.889531","DOIUrl":null,"url":null,"abstract":"The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed and the V/sub phl/ temperature dependence in the 100-300 K range is determined by the carrier mobility change. A quadrant p-i-n photodiode based on an InP/InGaAs/InP heterostructure was fabricated and its electrical characteristics studied. The photodetector shows wide spectral characteristics (0.9-1.7 /spl mu/m) with a responsivity of each element of 0.62 A/W and a slope of the inversion characteristics of K=(0.8-1.0) 10/sup 3/ V/W.mm.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed and the V/sub phl/ temperature dependence in the 100-300 K range is determined by the carrier mobility change. A quadrant p-i-n photodiode based on an InP/InGaAs/InP heterostructure was fabricated and its electrical characteristics studied. The photodetector shows wide spectral characteristics (0.9-1.7 /spl mu/m) with a responsivity of each element of 0.62 A/W and a slope of the inversion characteristics of K=(0.8-1.0) 10/sup 3/ V/W.mm.
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