A TSV-Last Approach for 3D-IC Integration and Packaging using WNi Platable Barrier Layer

M. Mariappan, K. Mori, M. Koyanagi, T. Fukushima
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Abstract

° A physical vapor deposition (PVD) formed WNi thinfilm over M1 (metal level 1) after its revealing in the via-last through-Si-via (TSV) process has been investigated for its ability in protecting the M1 metal during electroless (EL) plating of barrier/seed layers or Cu electroplating (EP). The WNi protection layer was also checked for (i) its platability of Cu by both EL and EP methods (the void-free formation of Cu-TSVs by direct Cu-EPing over WNi layer), (ii) its barrier performance against Cu diffusion (from the absence of Cu singal in both WNi and Si region of Auger electron depth profile), (iii) its adhession nature (intactness of film after the tape-peel test), and (iv) its endurance during Cu-CMP (chemical mechanical polishing). All the results confimed that PVD formed WNi not only protects the M1 metal layer from the EL or EP bath, but also forms a very good barrier-cum-seed layer in the Cu-TSVs.
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基于WNi平板阻挡层的3d集成封装TSV-Last方法
°研究了物理气相沉积(PVD)在M1(金属级1)上形成的WNi薄膜,该薄膜在通过-最后通过- si -孔(TSV)工艺暴露后,在化学(EL)镀阻挡层/种子层或镀铜(EP)期间保护M1金属的能力。WNi保护层还通过EL和EP方法(通过直接Cu-EP在WNi层上形成无空洞的Cu- tsv), (ii)其对Cu扩散的阻挡性能(从俄歇电子深度剖面的WNi和Si区域中缺乏Cu信号),(iii)其附着力(胶带剥离测试后薄膜的完整性),以及(iv)其在Cu- cmp(化学机械抛光)过程中的耐久性。这些结果证实了PVD形成的WNi不仅可以保护M1金属层免受EL或EP浴的伤害,而且可以在cu - tsv中形成很好的阻挡和种子层。
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