Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy

Abstract

Topography simulation of chemical-vapordeposition (CVD) trench filling has been advanced as a tool for designing fabrication processes of high-voltage 4H-SiC superjunction devices. In the longitudinal section of filled stripe trenches, an experimentally observed dip, which had not been well reproduced with a previous technique using a fixed surface free energy $\gamma$, came to be qualitatively reproduced by including an orientation dependence of $\gamma$.