The Small-Signal Model Comparison and Analysis between AlGaN/GaN FinFETs and HEMTs on the Same Wafer

Abstract

In this letter, we proposed the small-signal models of AlGaN/GaN fin-shaped field-effect transistors (FinFETs) and AlGaN/GaN high electron mobility transistors (HEMTs). The parasitic parameters of device been extracted from small signal model, respectively. The comparisons of parasitic parameters and S-parameters between planer and 3D GaN device also are shown in this work.