Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng
{"title":"X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD","authors":"Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng","doi":"10.1109/ISNE.2016.7543313","DOIUrl":null,"url":null,"abstract":"X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.