WIP. Open-source standard cell characterization process flow on 45 nm (FreePDK45), 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm

R. Thapa, Samira Ataei, J. Stine
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引用次数: 3

Abstract

This paper describes the design flow of the standard cell characterization on five different technologies and integration of its results with other VLSI tools processes that can be duplicated and implemented for the research and education in the academia. In this proposed work, one design flow is on non-fabricable technology of open-source false-technology FreePDK45 of 45 nm CMOS technology [1]. The other design flows are in the fabricable technology in 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm. The design flow are automated to simplify the students with intricacy of the tools. This design flows in this work are automated for the tool, Virtuoso Liberate from Cadence Design Systems and students can easily adopt it as part of the VLSI design class curriculum. This characterization flow precisely models the electrical characteristics of the cell that has been subjected to different input variables as explained below. The characterized models are of high demand in other design tools used in between RTL to GDSII process flow.
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在制品的数量。开源标准电池表征工艺流程为45 nm (FreePDK45), 0.18µm, 0.25µm, 0.35µm和0.5µm
本文描述了在五种不同技术上的标准单元表征的设计流程,以及将其结果与其他VLSI工具流程的集成,这些流程可以在学术界的研究和教育中复制和实施。在这项工作中,一个设计流程是基于45纳米CMOS技术[1]的开源假技术FreePDK45的不可制造技术。其他设计流程是在0.18µm, 0.25µm, 0.35µm和0.5µm的可加工技术中。设计流程是自动化的,以简化学生使用工具的复杂性。这个设计流程在这个工作中是自动化的工具,Virtuoso从Cadence设计系统解放出来,学生可以很容易地采用它作为VLSI设计类课程的一部分。这种表征流程精确地模拟了受到不同输入变量影响的电池的电特性,如下所述。这些特征模型在RTL到GDSII工艺流程之间的其他设计工具中有很高的要求。
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Using Babbage's difference engine to introduce computer architecture WIP: Optimization algorithms: A key component of EDA education WIP. Open-source standard cell characterization process flow on 45 nm (FreePDK45), 0.18 µm, 0.25 µm, 0.35 µm and 0.5 µm Teaching assembly programming for ARM-based microcontrollers in a professional development kit Design flows and collateral for the ASAP7 7nm FinFET predictive process design kit
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