F. Ren, M. Hong, J. Kuo, W. Hobson, J. Lothian, H. Tsai, J. Lin, J. Mannaerts, J. Kwo, S. Chu, Y. Chen, A. Cho
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引用次数: 3
Abstract
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.
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