Design of SPDT Switch, 6 Bit Digital Attenuator, 6 Bit Digital Phase Shifter for L-Band T/R Module using 0.7 μM GaAs MMIC Technology

N. D. Doddamani, Harishchandra, A. Nandi
{"title":"Design of SPDT Switch, 6 Bit Digital Attenuator, 6 Bit Digital Phase Shifter for L-Band T/R Module using 0.7 μM GaAs MMIC Technology","authors":"N. D. Doddamani, Harishchandra, A. Nandi","doi":"10.1109/ICSCN.2007.350752","DOIUrl":null,"url":null,"abstract":"The performance of modern radar systems with active phased array antennas is mainly driven by the performance of the microwave T/R modules. To reduce the size, weight, cost and power consumption, as well as to achieve better phase and amplitude accuracies for realizing low sidelobe levels with an accurate beam steering, T/R modules, now-a-days, employ MMICs (monolithic microwave integrated circuits) for implementing transmit/receive chain. The L-band SPDT switch, 6-bit digital attenuator, 6-bit digital phase shifter have been designed using GAETEC Hyderabad 0.7 μm GaAs MESFET switch model to handle 30 dBm peak power. All the above components have been designed and simulated using Agilent ADS CAD tool interfaced with Academy Layout. The SPDT switch with insertion loss less than -1 dB, isolation greater than 60 dB and return loss better than 20 dB has been realized on a single 3.0 mm × 2.35 mm GaAs chip. A 6-bit digital attenuator has a 31.5 dB attenuation range in 0.5 dB increments; 2.5° phase error and return loss better than 15 dB. The 6 bits are cascaded to form a complete attenuator on a double 3.5 mm × 2.35 mm GaAs chip with 3 attenuator bits in each for a better yield. A 6-bit digital phase shifter with 9 dB insertion loss, return loss better than 15 dB has been realized on a two GaAs chips with size 4.0 mm × 2.35 mm and 3.0 mm × 2.35 mm and 3 phase bits in each chip for the better yield","PeriodicalId":257948,"journal":{"name":"2007 International Conference on Signal Processing, Communications and Networking","volume":"38 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Signal Processing, Communications and Networking","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSCN.2007.350752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26

Abstract

The performance of modern radar systems with active phased array antennas is mainly driven by the performance of the microwave T/R modules. To reduce the size, weight, cost and power consumption, as well as to achieve better phase and amplitude accuracies for realizing low sidelobe levels with an accurate beam steering, T/R modules, now-a-days, employ MMICs (monolithic microwave integrated circuits) for implementing transmit/receive chain. The L-band SPDT switch, 6-bit digital attenuator, 6-bit digital phase shifter have been designed using GAETEC Hyderabad 0.7 μm GaAs MESFET switch model to handle 30 dBm peak power. All the above components have been designed and simulated using Agilent ADS CAD tool interfaced with Academy Layout. The SPDT switch with insertion loss less than -1 dB, isolation greater than 60 dB and return loss better than 20 dB has been realized on a single 3.0 mm × 2.35 mm GaAs chip. A 6-bit digital attenuator has a 31.5 dB attenuation range in 0.5 dB increments; 2.5° phase error and return loss better than 15 dB. The 6 bits are cascaded to form a complete attenuator on a double 3.5 mm × 2.35 mm GaAs chip with 3 attenuator bits in each for a better yield. A 6-bit digital phase shifter with 9 dB insertion loss, return loss better than 15 dB has been realized on a two GaAs chips with size 4.0 mm × 2.35 mm and 3.0 mm × 2.35 mm and 3 phase bits in each chip for the better yield
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于0.7 μM GaAs MMIC技术的l波段T/R模块SPDT开关、6位数字衰减器、6位数字移相器设计
现代有源相控阵雷达系统的性能主要取决于微波收发模块的性能。为了减小尺寸、重量、成本和功耗,以及实现更好的相位和幅度精度,通过精确的波束转向实现低旁瓣电平,现在的T/R模块采用mmic(单片微波集成电路)来实现发射/接收链。采用GAETEC Hyderabad 0.7 μm GaAs MESFET开关模型设计了l波段SPDT开关、6位数字衰减器、6位数字移相器,可处理30dbm峰值功率。利用Agilent ADS CAD工具与Academy Layout界面对上述各部件进行了设计和仿真。在单个3.0 mm × 2.35 mm GaAs芯片上实现了插入损耗小于-1 dB、隔离度大于60 dB、回波损耗优于20 dB的SPDT开关。6位数字衰减器以0.5 dB增量的衰减范围为31.5 dB;相位误差2.5°,回波损耗优于15db。6位级联在双3.5 mm × 2.35 mm GaAs芯片上形成一个完整的衰减器,每个芯片上有3个衰减器位,以获得更好的良率。在尺寸分别为4.0 mm × 2.35 mm和3.0 mm × 2.35 mm的GaAs芯片上实现了插入损耗为9db,回波损耗优于15db的6位数字移相器,每个芯片上有3个相位位,从而获得了更好的良率
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Multilayer Perceptron Neural Network Architecture using VHDL with Combinational Logic Sigmoid Function A Service Time Error Based Scheduling Algorithm for a Computational Grid ASIC Architecture for Implementing Blackman Windowing for Real Time Spectral Analysis FPGA Implementation of Parallel Pipelined Multiplier Less FFT Architecture Based System-On-Chip Design Targetting Multimedia Applications Modified Conservative Staircase Scheme for Video Services
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1