{"title":"Electrically evoked compound action potential (ECAP) stimulus-artefact (SA) blanking low-power low-noise CMOS amplifier","authors":"Dean Wheatley, Torsten Lehmann","doi":"10.1109/MWSCAS.2007.4488536","DOIUrl":null,"url":null,"abstract":"A low-power and low-noise CMOS OTA-based amplifier which minimises stimulus artefacts (SAs) in electrically evoked compound action potential (ECAP) measurements is presented. The amplifier is to be incorporated into an electrical stimulation epi-retinal vision prothesis ECAP measurement system. The amplifier has four gain settings (50, 60, 70, 80 dB) over a 7.4-9.9 kHz bandwidth, an input-referred noise of 5.6 muVrms (0.1-10 kHz) and consumes only 12.6 muA quiescent current. The amplifier is simulated using a high voltage 0.35 mum CMOS process and demonstrates an excellent tradeoff of key performance measures.","PeriodicalId":256061,"journal":{"name":"2007 50th Midwest Symposium on Circuits and Systems","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 50th Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2007.4488536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A low-power and low-noise CMOS OTA-based amplifier which minimises stimulus artefacts (SAs) in electrically evoked compound action potential (ECAP) measurements is presented. The amplifier is to be incorporated into an electrical stimulation epi-retinal vision prothesis ECAP measurement system. The amplifier has four gain settings (50, 60, 70, 80 dB) over a 7.4-9.9 kHz bandwidth, an input-referred noise of 5.6 muVrms (0.1-10 kHz) and consumes only 12.6 muA quiescent current. The amplifier is simulated using a high voltage 0.35 mum CMOS process and demonstrates an excellent tradeoff of key performance measures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
