Sheng-Wen Peng, Chih-Wei Yang, Chao-Hung Cheng, Che-Kai Lin, H. Chiu
{"title":"A high breakdown voltage and low switching loss GaN schottky diode using CHF3 plasma treatment","authors":"Sheng-Wen Peng, Chih-Wei Yang, Chao-Hung Cheng, Che-Kai Lin, H. Chiu","doi":"10.1109/EDSSC.2010.5713710","DOIUrl":null,"url":null,"abstract":"In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF<inf>4</inf> and CHF<inf>3</inf> treatment technology were proposed. The Schottky diode with 60sec CHF<inf>3</inf> plasma treated exhibits a high breakdown voltage of −352V, and a low reverse leakage current of 10<sup>−7</sup>A. It also presented low switching loss and high stability. According the outstanding performance, we proposed circular Schottky diode with CHF<inf>3</inf> plasma treated was promising in converter circuit applications.","PeriodicalId":356342,"journal":{"name":"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2010.5713710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this study, the circular Schottky diodes fabricated on a standard AlGaN/GaN epitaxial wafer with fluorine ions plasma CF4 and CHF3 treatment technology were proposed. The Schottky diode with 60sec CHF3 plasma treated exhibits a high breakdown voltage of −352V, and a low reverse leakage current of 10−7A. It also presented low switching loss and high stability. According the outstanding performance, we proposed circular Schottky diode with CHF3 plasma treated was promising in converter circuit applications.
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