K. Petrosyants, D. Silkin, D. Popov, M. Ismail-Zade
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引用次数: 1
Abstract
Comparative modeling of induced charge in FinFET and MOSFET structures is performed. A comparative analysis of the influence of various mechanisms on the occurrence of a current pulse after a particle strike is carried out. The SEE sensitivity of the MOSFET and FinFET based 6T SRAM cells were modeled using TCAD-SPICE mode simulation.
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