H. Uchida, H. Asai, Y. Ieki, M. Ichimura, C. Shao, E. Arai
{"title":"Effect of oxidation ambient on phosphorus diffusion in SOI","authors":"H. Uchida, H. Asai, Y. Ieki, M. Ichimura, C. Shao, E. Arai","doi":"10.1109/IWCE.1998.742745","DOIUrl":null,"url":null,"abstract":"Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.
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