M. Hiratani, T. Hamada, S. Iijima, Y. Ohji, I. Asano, N. Nakanishi, S. Kimura
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引用次数: 10
Abstract
We demonstrate a novel MIM capacitor with a heteroepitaxial Ta/sub 2/O/sub 5/ dielectric, the permittivity of which is as high as 50. The heteroepitaxy of Ta/sub 2/O/sub 5/ on the Ru electrode changes its crystal symmetry from a conventional orthorhombic system to a hexagonal one. One-dimensional Ta-O-Ta chains along the c-axis bring about delocalized electrons, large polarizability and thus enhanced permittivity. This technology is promising for the application of Ta/sub 2/O/sub 5/ to Gbit DRAMs, eliminating the need to use such exotic materials as BST and STO.
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