{"title":"Surface orientation depdendence of electro-optic effects in InGaAsP for lateral PIN-junction InGaAsP photonic-wire modulators","authors":"Y. Ikku, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2014.6880549","DOIUrl":null,"url":null,"abstract":"Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.