Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu
{"title":"Comparative study on frequency limits of nanoscale HEMTs with various channel materials","authors":"Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu","doi":"10.1109/ICIPRM.2013.6562649","DOIUrl":null,"url":null,"abstract":"The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic f<sub>T</sub> from the lower V<sub>ds</sub> because of the higher electron velocity. Owing to the shorter limit in the L<sub>g</sub> scaling at the lower V<sub>ds</sub>, the device C also exhibits the higher frequency limit in the intrinsic f<sub>T</sub>, indicating its potential for the low power and THz operation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562649","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic fT from the lower Vds because of the higher electron velocity. Owing to the shorter limit in the Lg scaling at the lower Vds, the device C also exhibits the higher frequency limit in the intrinsic fT, indicating its potential for the low power and THz operation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
