Microwave microstrip attenuators for GaAs monolithic integrated circuits

A. Zagorodny, N. Voronin, I. Yunusov, G. Goshin, A. Fateev, A. Popkov
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引用次数: 5

Abstract

Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.
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GaAs单片集成电路用微波微带衰减器
介绍了固定衰减微带衰减器的计算和带薄膜十字形电阻的t型衰减器原型实验。在0 ~ 40ghz频率范围内,t -衰减器在6db和3db处的衰减不均匀性不大于0.1 dB。将该器件作为带寄生参数的微带线组合进行了计算。采用L-2L脱包技术进行实验分析。
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