A. Zagorodny, N. Voronin, I. Yunusov, G. Goshin, A. Fateev, A. Popkov
{"title":"Microwave microstrip attenuators for GaAs monolithic integrated circuits","authors":"A. Zagorodny, N. Voronin, I. Yunusov, G. Goshin, A. Fateev, A. Popkov","doi":"10.1109/EDM.2012.6310189","DOIUrl":null,"url":null,"abstract":"Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2012.6310189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.