Michael N. Skoufis, Kedar Karmarkar, T. Haniotakis, S. Tragoudas
{"title":"A High-Performance Bus Architecture for Strongly Coupled Interconnects","authors":"Michael N. Skoufis, Kedar Karmarkar, T. Haniotakis, S. Tragoudas","doi":"10.1109/ISQED.2008.21","DOIUrl":null,"url":null,"abstract":"Coupling and increasing wire resistance on interconnect fabrics undermine the speed of the transient electrical signals. A brute-force approach for a crosstalk-reduced design relies on increasing the distance of interconnects from each other and using additional repeated logic. A pipelined bus-architecture exploiting the existing electrical noise is proposed. Process variations are taken into consideration in the analysis. The proposed technique is validated for the 65 nm and 90 nm CMOS processes for interconnects of various lengths.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Coupling and increasing wire resistance on interconnect fabrics undermine the speed of the transient electrical signals. A brute-force approach for a crosstalk-reduced design relies on increasing the distance of interconnects from each other and using additional repeated logic. A pipelined bus-architecture exploiting the existing electrical noise is proposed. Process variations are taken into consideration in the analysis. The proposed technique is validated for the 65 nm and 90 nm CMOS processes for interconnects of various lengths.