300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures
Haiwen Xu, R. Khazaka, Jishen Zhang, Zijie Zheng, Yue Chen, Xiao Gong
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引用次数: 1
Abstract
For the first time, we have developed a novel growth technique of Si1-xGex having active boron (B) doping concentration (NA) higher than 2×1021 cm-3. We achieve (1) uniform B doping and Ge composition in the epi-growth direction, (2) excellent uniformities in Si1-xGex thickness and resistivity across the entire 300 mm wafer, (3) an ultra-low as-deposited specific contact resistivity (ρc) of 5.1×10-10 Ω-cm2 on the sample with the highest NA of 2.5×1021 cm-3, and (4) successful selective growth on the advanced 3D structures with excellent conformality and thickness controllability.