{"title":"Novel ultralow R/sub on/ MBE GaAs MESFET's for high-frequency high-temperature switched-mode power converter applications","authors":"K. Shenai, D. Hodge, M. Feuer, J. Cunningham","doi":"10.1109/ISPSD.1994.583684","DOIUrl":null,"url":null,"abstract":"This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R/sub on/) GaAs MESFET's fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET's with drain-source breakdown voltage V/sub DB/>30 V and specific on-state resistance R/sub sp/<0.13 m/spl Omega/-cm/sup 2/ were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R/sub on/ performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports on the theoretical and experimental results of novel ultra-low on-resistance (R/sub on/) GaAs MESFET's fabricated using Molecular Beam Epitaxy (MBE). Lateral GaAs MESFET's with drain-source breakdown voltage V/sub DB/>30 V and specific on-state resistance R/sub sp/<0.13 m/spl Omega/-cm/sup 2/ were fabricated using novel refractory metal gate and layered ohmic contact technologies in which all GaAs layers were grown using MBE. The measured R/sub on/ performance is in good agreement with simple calculations made from device design and doping parameters and represents the highest electrical conductivity obtained for a power semiconductor device in this VDB rating. These devices are useful in developing 5 V power supplies with switching frequencies in excess of 100 MHz for application in the next generation of information processing and computing systems.
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