A 210nA Quiescent Current Bandgap Reference with 5mA Load Capability Using Shared Error Amplifier

Binwei Yang, Renwei Chen, Chenchang Zhan
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Abstract

This paper presents an ultra-low quiescent current bandgap reference (BGR) with current loading capability. Based on sharing an error amplifier (EA) between the BGR core and the power transistor driving circuit, the maximum load current of the BGR is extended to 5mA without relying on an output buffer. The BGR uses a dual-clamping structure to achieve low temperature coefficient (TC) and improved DC regulation. The proposed BGR is designed in a standard 0.18-µm CMOS process. Measurement results show that the input voltage range is 1.68V -2V while the output voltage is 1.19V. The quiescent current is 210nA with a maximum load current of 5mA. In the temperature range of - 40°C to 125°C, the TC of the output voltage is 9.7ppm/ °C and 30. 76ppm/ °C at the light and heavy loads, respectively. Good line and load regulations are also achieved.
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基于共享误差放大器的5mA负载能力的210nA静态电流带隙基准电路
提出了一种具有负载电流能力的超低静态电流带隙基准(BGR)。基于在BGR核心和功率晶体管驱动电路之间共享一个误差放大器(EA),在不依赖输出缓冲器的情况下,BGR的最大负载电流扩展到5mA。BGR采用双箝位结构,实现了低温度系数(TC)和改进的直流调节。所提出的BGR采用标准的0.18µm CMOS工艺设计。测量结果表明,输入电压范围为1.68V ~ 2v,输出电压范围为1.19V。静态电流为210nA,最大负载电流为5mA。在- 40℃~ 125℃的温度范围内,输出电压的TC值为9.7ppm/℃,30。轻负荷和重载下分别为76ppm/°C。也达到了良好的线路和负载规定。
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