K. Furuna, J. Liang, N. Shigekawa, M. Matsubara, M. Dhamrin, Y. Nishio
{"title":"Electrical characteristics of Al foil/Si junctions by surface activated bonding method","authors":"K. Furuna, J. Liang, N. Shigekawa, M. Matsubara, M. Dhamrin, Y. Nishio","doi":"10.1109/IMFEDK.2016.7521694","DOIUrl":null,"url":null,"abstract":"We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the bonding of metal foils should be useful for fabricating several-ten-μm-thick electrodes.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the bonding of metal foils should be useful for fabricating several-ten-μm-thick electrodes.
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