Selector devices for cross-point ReRAM

Seonghyun Kim, Wootae Lee, H. Hwang
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引用次数: 12

Abstract

Both varistor-type bidirectional selector (VBS) and ultrathin NbO2 device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×107A/cm2) and high selectivity (~104). Ultrathin NbO2 exhibits excellent TS characteristics such as high temperature stability (~160oC), good switching uniformity, and extreme scalability.
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交叉点ReRAM的选择器设备
对压敏型双向选择器(VBS)和具有阈值开关(TS)特性的超薄NbO2器件进行了研究。高度非线性的VBS具有高电流密度(>;3×107A/cm2)和高选择性(~104)的优异性能。超薄NbO2具有优异的TS特性,如高温稳定性(~160℃),良好的开关均匀性和极高的可扩展性。
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