{"title":"Selector devices for cross-point ReRAM","authors":"Seonghyun Kim, Wootae Lee, H. Hwang","doi":"10.1109/CNNA.2012.6331466","DOIUrl":null,"url":null,"abstract":"Both varistor-type bidirectional selector (VBS) and ultrathin NbO<sub>2</sub> device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×10<sup>7</sup>A/cm<sup>2</sup>) and high selectivity (~10<sup>4</sup>). Ultrathin NbO<sub>2</sub> exhibits excellent TS characteristics such as high temperature stability (~160<sup>o</sup>C), good switching uniformity, and extreme scalability.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
Both varistor-type bidirectional selector (VBS) and ultrathin NbO2 device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>;3×107A/cm2) and high selectivity (~104). Ultrathin NbO2 exhibits excellent TS characteristics such as high temperature stability (~160oC), good switching uniformity, and extreme scalability.
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